AIMCQ120R080M1TXTMA1
Product Attributes
| Part Status | Active |
|---|---|
| Mounting Type | Surface Mount |
| FET Type | N-Channel |
| FET Feature | - |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Grade | Automotive |
| Qualification | AEC-Q101 |
| Current - Continuous Drain (Id) @ 25°C | 34A (Tc) |
| Drain to Source Voltage (Vdss) | 1200 V |
| Gate Charge (Qg) (Max) @ Vgs | 24 nC @ 20 V |
| Power Dissipation (Max) | 211W (Tc) |
| Technology | SiCFET (Silicon Carbide) |
| Vgs (Max) | +25V, -10V |
| Drive Voltage (Max Rds On, Min Rds On) | 18V, 20V |
| Package / Case | 22-PowerBSOP Module |
| Supplier Device Package | PG-HDSOP-22 |
| Rds On (Max) @ Id, Vgs | 100mOhm @ 10A, 20V |
| Vgs(th) (Max) @ Id | 5.1V @ 3.3mA |
| Input Capacitance (Ciss) (Max) @ Vds | 671 pF @ 800 V |